First 900 volt power MOSFET using charge compensation principle for switched mode power supplies (SMPS ), industry and renewable energy applications.
Infineon continues to deliver energy-saving CoolMOS power MOS FETs with extremely low static and dynamic power losses. Based on the device concept of charge compensation the on-resistance (RDS(on)) can be drastically reduced by a factor of four or more per package type, compared to other 900V conventional MOSFETs.
CoolMOS TMC3 900V also offers a very low figure-of-merit on-resistance times gate charge (RDS(on)*Qg) of 34ohm*nC, translating into low conduction, driving and switching losses.
The energy stored in the output capacitance is reduced by a factor of two compared to conventional 900V MOS FETs, which reduces power losses during hard-switched turn-on. The CoolMOS TMC3 900V is well suited for high efficiency switch mode power supplies, industry and renewable energies applications.
Change of design criteria is possible as designers can allow a higher DC-link or input voltage. High power applications which uses three-phase PFC and PWM stages with DC-link voltages up to 750V will benefit from CoolMOS TMC3 900V offering lowest on-resistance in TO 247 package. The high blocking voltage in combination with low conduction losses and switching losses also open up for new design criteria in quasi-resonance flyback and single transistor forward topologies, used in LCD-TV and PC silverboxes for example.
Higher efficiency, reduced system costs, and high power density are pointing the way towards future system development.
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