Energy-Saving CoolMOS

First 900 volt power MOSFET using charge compensation principle for switched mode power supplies (SMPS ), industry and renewable energy applications.
Infineon continues to deliver energy-saving CoolMOS power MOS FETs with extremely low static and dynamic power losses. Based on the device concept of charge compensation the on-resistance (RDS(on)) can be drastically reduced by a factor of four or more per package type, compared to other 900V conventional MOSFETs.
CoolMOS TMC3 900V also offers a very low figure-of-merit on-resistance times gate charge (RDS(on)*Qg) of 34ohm*nC, translating into low conduction, driving and switching losses.
The energy stored in the output capacitance is reduced by a factor of two compared to conventional 900V MOS FETs, which reduces power losses during hard-switched turn-on. The CoolMOS TMC3 900V is well suited for high efficiency switch mode power supplies, industry and renewable energies applications.
Change of design criteria is possible as designers can allow a higher DC-link or input voltage. High power applications which uses three-phase PFC and PWM stages with DC-link voltages up to 750V will benefit from CoolMOS TMC3 900V offering lowest on-resistance in TO 247 package. The high blocking voltage in combination with low conduction losses and switching losses also open up for new design criteria in quasi-resonance flyback and single transistor forward topologies, used in LCD-TV and PC silverboxes for example.
Higher efficiency, reduced system costs, and high power density are pointing the way towards future system development.

www.infineon.com/powermanagement

Microsemi Expands Power Module Portfolio for Solar Inverters

Microsemi Corporation (Nasdaq:MSCC) a leading manufacturer of high performance analog mixed signal integrated circuits and high reliability semiconductors, has expanded its line of standard power modules for solar inverters with four new devices in compact SP4 and SP6-P packages.

All four modules feature a boost stage for input power conditioning, associated with a full bridge configuration, for unipolar switching. They combine low saturation "Trench & Field Stop" IGBT top switches that operate at line frequency with fast NPT IGBT bottom switches designed to switch in the 15 kHz to 50 kHz range.

"The introduction of these new power modules shows our commitment to support the solar market with unique products. The implementation of a boost stage, generating a regulated DC supply from the solar cells energy, to feed a full bridge configuration within the same module package achieves a highly integrated inverter power core from the solar panels input up to the inverter's output," said Serge Bontemps, Power Modules Products Development Director in Merignac, France. "These devices in the high power range, offer minimum losses for best system efficiency and size," he said.

As the previously introduced modules, the diodes in the full bridge section of the new devices are matched to the power transistors for improved solar inverter efficiency as well. High speed, soft recovery DQ series diodes are designed in parallel with the top IGBTs to provide low recovery losses in combination with the bottom fast IGBTs. Low forward voltage diodes protect the bottom IGBTs during output current zero crossings. Integrated thermal sensors monitor the module case for over-temperature protection for SP6-P modules.

These new Microsemi power modules include two 600V and two 1200V models. For each voltage rating the two lowest power devices are offered in the SP4 package while the two higher power ones are integrated in the very low profile, 12mm height, SP6-P housing. The Boost stage of the 600V products is made of COOLMOS(tm) devices while for 1200V modules it is featuring fast NPT IGBT's. In all cases, the boost diode is a high speed, soft recovery DQ type but SiC diode is possible as an option to further increase switching frequency or to reduce switching losses and disturbance.

The new boost stage + full bridge modules:

Module Full Boost
Bridge Technology Voltage Current Package NTC Technology
APTGV50H60BG Trench/NPT COOLMOS 600V 50A SP4 N/A
APTGV100H60BTPG Trench/NPT COOLMOS 600V 100A SP6-P Yes
APTGV25H120BG Trench/NPT IGBT 1200V 25A SP4 N/A
APTGV50H120BTPG Trench/NPT IGBT 1200V 50A SP6-P Yes

Technical data sheets of the new power modules for solar inverters are available on the Microsemi website: www.microsemi.com. Samples are available immediately. Prices range from $37.18 to $78.14 in quantities of 1K to 5K.