Sweden presented specifications for its BitSiC-1206 SiC NPN bipolar junction transistor as well as some details on possible future device developments. Meant to replace silicon IGBTs, the BitSiC-1206 enables lower losses at high frequencies and handles higher temperatures than IGBTs. The SiC transistor operates at junction temperatures up to 250°C.The BitSiC-1206 is rated for a VCEO of 1200 V and an IC of 6 A continuous or up to 35 A peak. According to Bo Hammarlund, CEO of TranSiC, SiC bipolars could be developed with higher current ratings, perhaps 50 A, in the future as SiC materials improve further and wafer costs drop.
The BitSiC-1206, which is now sampling, will be available in a TO-220 package, as a multichip module on a DBC substrate, or in die form. A short version of the datasheet is available at TranSic's website. For further details, write bo.hammarlund@transic.com.
