Turbinele eoliene actuale au depasit 5MW si se indreapta spre o capacitate de peste 10MW.

Despre autovehiculele electrice

Automobilele electrice au costuri de deplasare de 4 pana la 6 ori mai mici decât cele cu motor cu benzina/motorina. Aceasta deoarece randamentul motoarelor cu ardere interna este de doar 18-20%, ceea ce înseamnă ca doar o cincime din banii pe care ii cheltuiți pe combustibil folosesc la tracțiunea vehiculului, iar 4/5 folosesc la încălzirea atmosferei! Spre comparație, randamentul unui motor electric de peste 50 de cai putere este de peste 90%, conform standardelor.

https://en.wikipedia.org/wiki/Internal_combustion_engine#Energy_efficiency

Most steel engines have a thermodynamic limit of 37%. Even when aided with turbochargers and stock efficiency aids, most engines retain an average efficiency of about 18%-20%.^[9] Rocket engine efficiencies are much better, up to 70%, because they operate at very high temperatures and pressures and can have very high expansion ratios.^[10] (Electric motors are better still, at around 85-90% efficiency or more.)

Să menționăm deasemenea ca automobilele electrice nu au cutie de viteze, injectoare, pompe de combustibil și multe alte sub-ansamble care cresc prețul unei mașini cu motor cu ardere interna.

Cree XLamp LED Takes Aim at Inefficient Light Bulbs

Cree XLamp® MPL EasyWhite™ LED Delivers up to 1500 Lumens at 75 Lumens per Watt in a Breakthrough Package Design

DURHAM, N.C., -— Cree, Inc. (Nasdaq: CREE), a market leader in LED lighting, announces a breakthrough new lighting-class LED that can obsolete energy-inefficient light bulbs. The XLamp® MPL EasyWhite™ LED offers the performance, color consistency and lumen density to displace conventional light sources, all in the industry’s smallest package. Featuring Cree’s unique EasyWhite innovation, the LEDs are specified like traditional light sources—simply indicate the desired color temperature and brightness.

The multi-chip XLamp MPL EasyWhite LED is optimized for directional lighting applications. With proper system design, the MPL EasyWhite LED can deliver the required light output for a 3000-K, 75-Watt equivalent BR-30 light bulb, but would consume 78-percent less energy than traditional incandescent technology. This would meet the efficacy and lumen-output requirements for integral LED lamps as defined by ENERGY STAR®.

The XLamp MPL EasyWhite LED features up to 1500 lumens at 250 mA and a compact 12-mm x 13-mm footprint, which is 72 percent smaller than the nearest-competing LED component. It is commercially available in volume now with standard lead times and in small quantities through authorized Cree distributors, as well as in sample quantities direct from Cree.

Date Announced: 03 Feb 2010 http://www.ledsmagazine.com

600V MOSFETs Feature High Robustness

Alpha & Omega Semiconductor announced the release of ten 600V-rated MOSFETs. The new 600V devices are ideally suited for use in AC-DC power supplies and adapters used for desktop and notebook PCs, LCD TVs, and handheld devices such as cellular phones and PDAs. 
The new MOSFETs allow high efficiency power conversion with reduced switching losses by offering an optimized combination of low RDS(on) and Crss. A wide range of applications can be supported with  current ratings from 1A, in the form of AOD1N60, to 12A in the forms of AOT12N60 and AOTF12N60. 
The high voltage MOSFETs were developed to reduce switching losses through lowering the Crss. In addition, robustness was “designed in” with high avalanche energy capability that is also guaranteed through 100% final testing. 
The devices are available in three industry-standard packages: DPAK, TO-220 and the electrically isolated TO-220F. 
www.aosmd.com

250A Power MOSFET for Motor-Drives from ST

STMicroelectronics Introduces 250A Power MOSFET Combining Package and Process Advances for Higher Motor-Drive Efficiency  

First discrete power MOSFET to deliver 1.5 milliohm on-resistance with high current handling for 55V applications.

Taking aim at reduced operating costs and lowering the environmental footprint in applications such as electric vehicles, STMicroelectronics (NYSE: STM), a world leader in power applications, has introduced a 250A surface-mount power MOSFET with the lowest on-resistance in the market, to minimize energy conversion losses and enable higher performance. 

The new device, the STV250N55F3, is the first power MOSFET to combine ST's PowerSO-10 package with ribbon bonding to achieve ultra-low die-free package resistance. Implemented in ST's high-density STripFET III fabrication process, the device offers a typical on-resistance of 1.5 milliohms. Further benefits of STripFET III include low switching losses and rugged avalanche characteristics. The nine-lead source connection also reduces on-resistance, in addition to aiding heat dissipation. Overall, the package is rated for 300W dissipation at 25 degrees Celsius.

The high current rating allows engineers to design-out multiple parallel MOSFETs to save board space and cost. Standard driving thresholds also simplify driver-circuit design. The STV250N55F3 is rated for applications up to 55V.

The ability to operate at temperatures up to 175 degrees Celsius makes the STV250N55F3 suitable for use in high-current electric-traction applications such as forklift trucks, golf carts and pallet trucks, as well as lawnmowers, wheelchairs, and electric bikes. Reliability and robustness are assured through 100% avalanche testing both at wafer level as well as on finished products. In the future, the device will be eligible for automotive-grade applications.

Within the same family, ST also has the 55V STV200N55F3, which implements a four-lead source connection and is rated for 200A continuous drain current.

STripFET III Features

ST has just developed a new generation of the well known STripFET technology: STripFET III. This process is also known as EHD3 (Extremely High Density) resulting from the enhanced density of the equivalent cells, well above 57 Mcells/inch2.

EHD3 main feature is the strip width and the inter-strip gaps, which bring a considerable channel perimeter density: W=62m/cm2
 High cell density and channel perimeter
 Extremely low figure of merit
 Optimized intrinsic recovery

The main electrical characteristics such as the current capability and RDS(on) are strictly dependent on the channel perimeter per unit area.

 Very low RDS(on) gives low conduction losses
 Cost effectiveness
 Excellent switching behaviour
 Reduced power losses of the diode.
  
Normalized figure of merit at 4.5V through the EHD generations

The EHD3, thanks to the decreased strip width, gains 38% in the channel perimeter per unit area, with respect to the second generation, this also means a great benefit in terms of RDS(on)
The figure of merit RDS(on) *Qg has been slashed by 43%. The EHD graph explains the trend in this parameter, which is of paramount importance in many applications.
On account of the main power supply requirement to operate at the highest efficiency, special attention has been given to the reverse recovery characteristic of the parasitic body diode.
In particular the Qrr is 39% smaller than in the previous EHD generations. Moreover, the low intrinsic resistance, Rg ( 1.9ohm is of outstanding importance to reduce the gate driving power losses. All these improvements are useful attributes in applications, especially for synchronous rectification for motherboard market, that allow us to consider the EHD3 technology as a benchmark in the low voltage scenario.

Further information is available at www.st.com/pmos

Dual In-line Package Intelligent Power Module

Mitsubishi Electric developed a Dual In-line Package Intelligent Power Module (DIP-IPM ver.4) with ratings of 50A and 75A/600V by developing the 5th generation full gate CSTBT (Carrier Storage Trench Bipolar Transistor).

In an IGBT, the resistance of the n- drift layer has to be kept high in order to withstand the blocking voltage at off-state. As the hole injection from collector to n- drift layer at on-state, the resistance of the n- drift layer is reduced, and power loss is reduced. However, the resistance of the n- drift layer near emitter side is difficult to reduce because the hole density here becomes low due to the far away distance to the collector. Hence, it is difficult to achieve a very low on-state voltage. CSTBT reaches a much lower on-state voltage by the
virtue of optimization of the hole density in the whole n- drift layer. A special n barrier called as carrier stored layer is designed under the P base layer to hinder the holes injected from the collector from penetrating to the emitter. This makes the further reduction of the on-state voltage possible because hole density is increased in the n- drift layer even near the emitter side. Since CSTBTis developed to be with high current carrying capability, sometimes it is designed in a structure called plugged cell merged CSTBTso as to ensure a certain withstanding capability against short circuit failure.

www.mitsubishichips.com

High-voltage Linear Regulators

With a continuous 70 mA output, the ability to operate at a continuous input voltage of up to 30V and load-dump protection up to 43.5V, Microchip’s new MCP1790 and MCP1791 (MCP179X) high-voltage linear regulators (LDOs) are ideal for automotive and industrial applications.

They also feature low quiescent current, shutdown current and ceramic capacitor stability, which enable smaller, ultra-eficient designs at lower costs. 

The MCP179X LDOs were designed for use in applications requiring continuous operation at high input voltages, such as 12V automotive 
and 24V industrial applications. The built-in load-dump protection feature shields the system from the voltage transients often found in these types of applications, particularly those in the automotive market. All of this, combined with ceramic output capacitor stability and a low quiescent current of just 70 microamperes, enables more compact, power-eficient and reliable designs.
Examples of automotive applications for the MCP179X LDOs include those where a device is powered directly from the car’s battery, such as instrumentation lighting, power windows and locks, electronic accessory power adapters and stereo systems. The LDOs are also well-suited for high-voltage industrial applications such as security systems, ire alarms, thermostat controls and sensors, among others.
The MCP1790 is available in a 3-pin SOT-223 or DDPAK package for $0.76 and $0.78 each in 10,000-unit quantities, respectively. The MCP1791 is available in a 5-pin SOT-223 or DDPAK package for $0.80 and $0.88 each in 10,000-unit quantities, respectively. Samples of both LDOs are available today at http://sample.microchip.com. Volume quantities can be ordered at www.microchipdirect.com. 

For more details, visit www.microchip.com/MCP179X

National Semiconductor is entering the photovoltaic market with new technology

NationalSemiconductor is entering the photovoltaic market with new technology designed to increase the effectiveness of solar panels under variable light conditions. National's SolarMagic™ technology recoups up to 50 percent of the lost energy, dramatically improving the economics in shaded and other real-world conditions. The SolarMagic technology maximizes the energy output of each solar panel, compensating for much of the energy lost due to shadows from tree branches or power lines, dust and debris, and panel-to-panel mismatch.National Semiconductor is entering the photovoltaic market with new technology designed to increase the effectiveness of solar panels under variable light conditions. National's SolarMagic™ technology recoups up to 50 percent of the lost energy, dramatically improving the economics in shaded and other real-world conditions. The SolarMagic technology maximizes the energy output of each solar panel, compensating for much of the energy lost due to shadows from tree branches or power lines, dust and debris, and panel-to-panel mismatch.

Today's solar installations are disproportionately impacted by shading conditions, which significantly limits the design, location, and energy output of typical residential solar installations. Shading conditions can even invalidate local and government incentives, making these installations cost-prohibitive. National's SolarMagic technology minimizes the system impact of shading and other outdoor conditions, maximizing the energy output of each solar panel.

For more information, contact solarmagic@nsc.com.

900 kHz Single-Channel Step-Down Switching Regulator

ROHM developed the BD9870, a single-channel step-down switching regulator that offers high efficiency, exceptional space savings, design simplicity and high reliability for a variety of applications, including TVs, DVD players, gaming consoles, PCs, car audio and navigation systems, industrial and office equipment, and entertainment systems. 

The BD9870's integrated protection and compensation circuitry, smaller external components and ceramic input/output capacitor compatibility result in space savings of up to 60%.

The BD9870 integrates a switching voltage regulator, 1.5 A-rated p-channel power MOSFET and compensation circuitry into a compact TO-252S-5 package. Eliminating external feedback compensation components makes complete design possible using only an external coil, diode and output capacitor. In addition, the device's industry-leading 900 kHz operation permits use of a smaller coil and ceramic output capacitor, which, when combined with the regulator’s internal features, results in a 60% board-space savings compared with current solutions on the market.

Compared with competitive, compensation-integrated switchers, the BD9870 IC offers the industry's highest efficiency (88%) and output accuracy (±1.0%), the lowest bias current (3mA) and zero standby current. The input voltage can range from 8 V to 35 V, with output voltage adjustable down to 1.0 V. A soft-start feature (5ms, fixed) is also included. Reliability is enhanced by internal protection circuits, including thermal shutdown (TSD) and over-current protection (OCP).

The combined benefits of the BD9870's small package size, high switching frequency, minimal external components and integrated protection circuitry results in a compact, efficient, and highly reliable switching power supply that is as simple to design in and use as an LDO. www.rohm.com

Secondary Side Rectification for SMPS Designs

Fairchild Semiconductor offers power supply designers a Power-SPM module that increases efficiency in power supplies to meet stringent ENERGYSTAR requirements. The Power-SPM FPP06R001 is a highly integrated synchronous rectifier module that increases power efficiency, system ruggedness and space efficiency in power supplies designs. Incorporating two PowerTrench® MOSFETs and a high current gate driver in a compact transfer-molded package, the Power-SPM simplifies board design, eliminates up to 10 discrete components and reduces board space by 20 percent. It provides 10 percent lower on-resistance and 16 percent lower stray inductance compared to discrete solutions, which results in lower thermal dissipation and reduced voltage stress. Its high efficiency is instrumental in helping power supply designs meet next generation ENERGYSTAR requirements. These requirements specify that power supplies must achieve 85 percent or greater efficiency at normal output load conditions.
Fairchild is at the forefront of solving energy-efficiency challenges. The ENERGYSTAR requirement for power supply units will soon increase to 88 percent minimum efficiency at the medium output load condition. This Power-SPM module will be instrumental in helping power supplies meet this requirement, says Donghye Cho, Director of Fairchild’s Power Supply System team.

www.fairchildsemi.com

Energy-Saving CoolMOS

First 900 volt power MOSFET using charge compensation principle for switched mode power supplies (SMPS ), industry and renewable energy applications.
Infineon continues to deliver energy-saving CoolMOS power MOS FETs with extremely low static and dynamic power losses. Based on the device concept of charge compensation the on-resistance (RDS(on)) can be drastically reduced by a factor of four or more per package type, compared to other 900V conventional MOSFETs.
CoolMOS TMC3 900V also offers a very low figure-of-merit on-resistance times gate charge (RDS(on)*Qg) of 34ohm*nC, translating into low conduction, driving and switching losses.
The energy stored in the output capacitance is reduced by a factor of two compared to conventional 900V MOS FETs, which reduces power losses during hard-switched turn-on. The CoolMOS TMC3 900V is well suited for high efficiency switch mode power supplies, industry and renewable energies applications.
Change of design criteria is possible as designers can allow a higher DC-link or input voltage. High power applications which uses three-phase PFC and PWM stages with DC-link voltages up to 750V will benefit from CoolMOS TMC3 900V offering lowest on-resistance in TO 247 package. The high blocking voltage in combination with low conduction losses and switching losses also open up for new design criteria in quasi-resonance flyback and single transistor forward topologies, used in LCD-TV and PC silverboxes for example.
Higher efficiency, reduced system costs, and high power density are pointing the way towards future system development.

www.infineon.com/powermanagement

Microsemi Expands Power Module Portfolio for Solar Inverters

Microsemi Corporation (Nasdaq:MSCC) a leading manufacturer of high performance analog mixed signal integrated circuits and high reliability semiconductors, has expanded its line of standard power modules for solar inverters with four new devices in compact SP4 and SP6-P packages.

All four modules feature a boost stage for input power conditioning, associated with a full bridge configuration, for unipolar switching. They combine low saturation "Trench & Field Stop" IGBT top switches that operate at line frequency with fast NPT IGBT bottom switches designed to switch in the 15 kHz to 50 kHz range.

"The introduction of these new power modules shows our commitment to support the solar market with unique products. The implementation of a boost stage, generating a regulated DC supply from the solar cells energy, to feed a full bridge configuration within the same module package achieves a highly integrated inverter power core from the solar panels input up to the inverter's output," said Serge Bontemps, Power Modules Products Development Director in Merignac, France. "These devices in the high power range, offer minimum losses for best system efficiency and size," he said.

As the previously introduced modules, the diodes in the full bridge section of the new devices are matched to the power transistors for improved solar inverter efficiency as well. High speed, soft recovery DQ series diodes are designed in parallel with the top IGBTs to provide low recovery losses in combination with the bottom fast IGBTs. Low forward voltage diodes protect the bottom IGBTs during output current zero crossings. Integrated thermal sensors monitor the module case for over-temperature protection for SP6-P modules.

These new Microsemi power modules include two 600V and two 1200V models. For each voltage rating the two lowest power devices are offered in the SP4 package while the two higher power ones are integrated in the very low profile, 12mm height, SP6-P housing. The Boost stage of the 600V products is made of COOLMOS(tm) devices while for 1200V modules it is featuring fast NPT IGBT's. In all cases, the boost diode is a high speed, soft recovery DQ type but SiC diode is possible as an option to further increase switching frequency or to reduce switching losses and disturbance.

The new boost stage + full bridge modules:

Module Full Boost
Bridge Technology Voltage Current Package NTC Technology
APTGV50H60BG Trench/NPT COOLMOS 600V 50A SP4 N/A
APTGV100H60BTPG Trench/NPT COOLMOS 600V 100A SP6-P Yes
APTGV25H120BG Trench/NPT IGBT 1200V 25A SP4 N/A
APTGV50H120BTPG Trench/NPT IGBT 1200V 50A SP6-P Yes

Technical data sheets of the new power modules for solar inverters are available on the Microsemi website: www.microsemi.com. Samples are available immediately. Prices range from $37.18 to $78.14 in quantities of 1K to 5K.